作者
Youcef A Bioud, Abderraouf A Boucherif, Ali A Belarouci, Etienne A Paradis, Dominique A Drouin, Richard A Arès
发表日期
2016/3/6
研讨会论文
Porous Semiconductors-Science and Technology (PSST) Conference
简介
Mesoporous germanium layers (MP-Ge) were prepared with high growth rate (up to 300 nm/min) by using a new high-current-density, high-frequency bipolar electrochemical etching (BEE) process. The potential of porous semiconductor layers for optical sensing has been assessed by examining the resonance wavelength shift in the reflectance spectra before and after infiltration of ethanol.
学术搜索中的文章
YA Bioud, AA Boucherif, AA Belarouci, EA Paradis… - Porous Semiconductors-Science and Technology …, 2016