发明者
Hiroshi Kawarada, Wenxi Fei, Te Bi, Masayuki Iwataki
发表日期
2023/5/4
专利局
US
专利申请号
17910325
简介
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, eg PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
学术搜索中的文章
H Kawarada, W Fei, T Bi, M Iwataki - US Patent App. 17/910,325, 2023