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Disorder accumulation and annealing behavior on the Ga sublattice in gallium nitride (GaN) implanted with 1.0 MeV (60° off surface normal) at 180 or 300 K have been studied using in situ Rutherford backscattering spectrometry in a <0001>-channeling geometry. Complete amorphization in GaN is attained at 6.0 and 20 for irradiation at 180 and 300 K, respectively. A saturation in the Ga disorder at and behind the damage peak was observed at intermediate ion fluences at both 180 and 300 K. No measurable thermal recovery was found at 300 K for the full range of damage produced at 180 K. However, distinct epitaxial regrowth in the bulk and Ga reordering at surface occurred after annealing at 870 K. The implanted Au readily diffuses into the highly damaged regions at elevated temperatures, and the redistribution of the Au atoms in the implanted GaN varies with the damage profiles. A double …