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This paper presents an improved version of our previous gamma radiation sensor based on a floating gate MOSFET whose output current is changed by the total ionizing dose. Both versions exhibit zero bias operation and reprogramming capabilities. They have been designed in a standard CMOS technology, require little silicon area, and exhibit low power consumption. Sensitivity to radiation dose is -11.4 μA/krad, dose range over 3.6 krad, and lowest detectable dose lower than 2 rad. The new version features much higher linearity and supply voltage rejection and much lower sensitivity to ambient temperature.