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Recently, a few attempts to synthesize monolayers of transition metal dichalcogenides (TMDs) using the chemical vapor deposition (CVD) process had been demonstrated. However, the development of alternative processes to synthesize TMDs is an important step because of the time-consuming, required transfer and low thermal efficiency of the CVD process. Here, we demonstrate a method to achieve few-layers WSe₂ on an insulator via laser irradiation assisted selenization (LIAS) process directly, for which the amorphous WO₃ film undergoes a reduction process in the presence of selenium gaseous vapors to form WSe₂, utilizing laser annealing as a heating source. Detailed growth parameters such as laser power and laser irradiation time were investigated. In addition, microstructures, optical and electrical properties were investigated. Furthermore, a patternable WSe₂ concept was demonstrated by patterning …