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The formation of PtSe₂‐layered films is reported in a large area by the direct plasma‐assisted selenization of Pt films at a low temperature, where temperatures, as low as 100 °C at the applied plasma power of 400 W can be achieved. As the thickness of the Pt film exceeds 5 nm, the PtSe₂‐layered film (five monolayers) exhibits a metallic behavior. A clear p‐type semiconducting behavior of the PtSe₂‐layered film (≈trilayers) is observed with the average field effective mobility of 0.7 cm² V⁻¹ s⁻¹ from back‐gated transistor measurements as the thickness of the Pt film reaches below 2.5 nm. A full PtSe₂ field effect transistor is demonstrated where the thinner PtSe₂, exhibiting a semiconducting behavior, is used as the channel material, and the thicker PtSe₂, exhibiting a metallic behavior, is used as an electrode, yielding an ohmic contact. Furthermore, photodetectors using a few PtSe₂‐layered films as an adsorption …