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For next-generation biosensing applications, a dual dielectrically modulated tunnel field effect transistor based on electrostatically doping (DDM-EDTFET) has been proposed. The proposed device is implemented with the aim of reducing the fabrication complexity and cost of TFET based biosensor with nanoscale dimensions. For this, the proposed biosensor device utilizes polarity gate concept based on electrostatic doping to form the source-drain region. Moreover, a nanogap cavity is stacked between the gate electrode and HfO2 layer for detection of target biomolecules. In this pursuit, the proposed biosensor device offers significant sensing performance along with superior doping control over channel with minimum process variability issues and thermal budget. Based on extensive two-D TCAD device level simulations, sensing performance of the proposed biosensor device has been evaluated for both the charged (k> 1, ρ≠ 0) and charge-neutral (k> 1, ρ= 0) biomolecules. Furthermore, the sensing capability has been analyzed through distinct dielectric constant (k) and negative charge density (ρ−) of biomolecule at a specific gate and drain bias conditions.