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In this paper, we have explored and justified the reason behind the degradation in the cutoff frequency of the bipolar transistors evolved from the charge plasma concept. It has been observed that if the work function difference present between the emitter metal contact and silicon is greater than or equal to 0.68 eV (ϕ_m - ϕ_SI = 4.05 eV - 4.73 eV), it results in increment in the base width which is the inverse of the cutoff frequency. On top of this, two dimensional TCAD simulations of the different bipolar devices also demonstrate the same basewidth widening effect into the intrinsic region which is presentbetween the base region and collector region. Apart from this, if this difference is exactly equal to 0.5 eV (ϕ_m - ϕ_SI = 4.23 eV - 4.73 eV) then the base width widening effect can be completely eliminated from the bipolar devices base on the charge plasma.