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Metal organic chemical vapor deposition (MOCVD) has been investigated for elaboration of Bi₂Te₃ and Sb₂Te₃ using TMBi (Trimethylbismuth), TESb (Triethylantimony) and DETe (Diethyltellurium) as metal–organic sources. Their thermoelectric and physical properties were studied versus growth conditions. The MOCVD elaboration of Bi₂Te₃ and Sb₂Te₃ was carried out in an horizontal reactor for a temperature varying from 400 to 500°C, a total hydrogen flow rate D_T varying from 3 to 6 l mm⁻¹ and (R_VI/V) ratio ranging from 1.5 to 15. The thin films were deposited on pyrex and silicon substrates. The partial pressure of the V element varied between 0.5 10⁻⁴ to 2 10⁻⁴ atm to obtain high growth rate for micro-peltier applications. The cristallinity was investigated by X-ray diffraction and we observed a typical preferential c-orientation. The SEM micrographs show the layers quality and confirms the hexagonal structure …