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Metallorganic chemical vapor deposition (MOCVD) of (Bi1− xSbx) 2Te3 (0.25≤ x≤ 0.9) using trimethylbismuth, triethylantimony and diethyltellerium has been obtained on pyrex substrates. A polycrystalline structure has been confirmed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) observation. Energy dispersive X-ray spectroscopy (EDX) has been used to determine the chemical composition. We have studied the solid composition of antimony (xs) as function of its vapor composition (xv). The electrical properties of the alloys have been determined by using the Hall effect measurements. The measurement of the Seebeck coefficient revealed that p-type (Bi1− xSbx) 2Te3 thin films are promising for thermoelectric applications. The alloys of bismuth telluride with antimony telluride are among the better p-type materials available for thermoelectric applications near room temperature. Many researchers have studied the electrical and transport properties of Bi2Te3 [1–5] and Bi2Te3–Sb2Te3 [6–10]. Mzerd et al.[11] studied the thermoelectrical properties of Bi2Te3 and its alloy Bi0. 1Sb1. 9Te3 produced by molecular beam deposition and constructed thermal sensors based on [Bi0. 1Sb1. 9Te3 (p)− Bi2Te3 (n)] with a good sensitivity. Joraide [12] proved that the temperature affects the anisotropic properties of the electrical resistivity, and the Seebeck coefficient of a fine grain (Bi2Te3) 25–(Sb2Te3) 75 p-type alloy. Some transport properties of flash-evaporation Bi0. 5Sb1. 5Te3 films and their dependence on various annealing conditions were studied by Völklein et al.[13].(Bi1− xSbx) 2Te3 thin films have been deposited using several …