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Thin semiconducting thermoelectric films with narrow energy band gaps are considered to be very promising for future microdevice applications (sensors and generators). The polycrystalline BiSbTe alloys (V–VI semiconductors) are examples. In this report, the detailed temperature dependence of electrical resistivity  n- and p-type carrier concentration and and Hall mobility of n-type  p-type and p-type   and 0.77) alloy films prepared by metalorganic chemical vapor deposition are presented in the range of 100–500 K. From the room temperature measurement of the Seebeck coefficient (α), the values of α for   and with and 0.77 are found to be −220, +110, +240, and +210 μV/K, respectively, which are optimal in these types of film materials. The carrier concentration of these films at 300 K is found to be around The data …