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The results of the studies of structural, electrical, and thermoelectric properties of binary skutterudite thin films are presented. The n-type films were prepared without intentional doping on oxidized Si(100) and ceramic substrates using magnetron dc sputtering technique. The electron probe microanalysis has shown that the composition of the films is strongly affected by the preparation conditions. The x-ray measurements indicate the films to be amorphous if they are deposited on substrates kept at room temperature. On the basis of the differential thermal and x-ray analyses data, the temperature of the transition from the amorphous to crystalline state was established to be The films are polycrystalline with a preferential orientation of the growth along the (310) direction of the lattice if grown on substrates kept at 200 °C. The electrical resistivity and the Seebeck coefficient were measured from room …