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Narrow-band gap semiconductors n-Bi₂Te₃ (n-type) and p-(Bi_1−XSb_X)Te₃ (p-type) have been elaborated by metal organic chemical vapour deposition. The thermoelectric and electric properties of the best films grown under optimal conditions are presented. In the same growth, a pressure sensor and gas concentration sensor based on n-Bi₂Te₃ and p-(Bi_1−xSb_x)Te₃ thermoelectric materials are constructed using the thin film technology. The deposited materials are the best thermoelectric energy converters that allow a high sensitivity and a value of 5 mVtorr⁻¹ mW⁻¹ for the pressure sensor has been found. These sensors have an integrated thermocouple with a thermoelectric power equal to 420 μVK⁻¹. The thermal exchange of the heating surface, at a low heating power, with the surrounding gas is the principal function of these sensors.