作者
Haixuan Xu, Aleksandr Chernatynskiy, Donghwa Lee, Susan B Sinnott, Venkatraman Gopalan, Volkmar Dierolf, Simon R Phillpot
发表日期
2010/11/1
期刊
Physical Review B—Condensed Matter and Materials Physics
卷号
82
期号
18
页码范围
184109
出版商
American Physical Society
简介
The technologically important incorporation of extrinsic defects (, , , , and ) in is investigated using density-functional theory combined with thermodynamic calculations. Defect energies, the charge compensation mechanisms, and charge transfer levels, are determined for congruent and stoichiometric compositions. In general, under congruent (-rich) conditions impurities occupy lithium sites, compensated by lithium vacancies. Under stoichiometric (-rich) conditions, impurities occupy both lithium and niobium sites. The effects of the concentration of Mg on the dominant defect and site occupancy are analyzed. In addition, the thermal ionization energy and relative defect stability order for and are evaluated. The charge transfer levels of impurities with regard to the band structure, and their influences on the optical properties of the material are elucidated.
引用总数
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学术搜索中的文章
H Xu, A Chernatynskiy, D Lee, SB Sinnott, V Gopalan… - Physical Review B—Condensed Matter and Materials …, 2010