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In the present work, a new monolithic capacitive pressure sensor is being introduced. The sensor is manufactured according to a custom, 15-step SOI process. The process primarily offers great flexibility as far as sensor design is concerned. Absolute or differential pressure sensing is possible by simply arranging proper sensor package. Measurement sensitivity and span are easily regulated over a wide range of values by setting one-single design parameter. Attention is paid to avoid p–n junction formation in order to improve the sensor robustness against temperature increase and allow high-temperature post-processing without doping profile degradation. The presented design allows the implementation of an ordinary p-well CMOS post-process. Sensitivity of 2mV/kPa, within a span of 180kPa (2%) and a bandwidth of 25kHz, is achievable by means of a CMOS switched-capacitor ASIC that is developed and …