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Two-dimensional carrier profiling using scanning spreading resistance microscopy (SSRM) has recently been reported for Si- and InP-based structures. In this article, we report SSRM measurements solely on III–V material-based structures. We have studied GaAs and InP doping staircase structures, prepared using molecular-beam epitaxy. These structures were then used as calibration standards for the profiling of carrier density in state-of-the-art III–V-based optoelectronic devices. We discovered that SSRM data on GaAs can be obtained with either polarity; however, only one polarity (positive or negative sample bias for n- or respectively) produces SSRM results that show quantitative correlation with dopant concentration as determined by secondary ion mass spectrometry (SIMS). In comparison, SSRM measurements using both bias polarities on correlates well with SIMS, while exhibits a …