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There is described a method of manufacturing an optoelectronic device. The method generally has: etching a wafer of monocrystalline germanium, said etching forming a given density of pores contained within said monocrystalline germanium, with at least some of said pores being exposed at a surface of said wafer; depositing a substrate layer of a given crystalline material onto said surface, said substrate layer closing exposed ones of said pores; heating said wafer and said substrate layer, said heating transforming said pores into cavity-interspersed pillars interconnected to one another within said wafer; making a semiconductor component integral to said substrate layer, including collectively forming said optoelectronic device; and breaking said cavity-interspersed pillars of said wafer thereby freeing said optoelectronic device from a remaining wafer portion of said wafer.