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Band structure calculations of strained Ga (NAsP) quantum wells are performed within the framework of the extended-basis sp 3 d 5 s* tight-binding model. The nitrogen contribution is taken into account by introducing an additional s N orbital into the tight-binding basis. Biaxial strain effects on the band alignment of bulk Ga (NAsP) is studied for the ultra-diluted regime. We demonstrate a good agreement with experimental data both for transition energies and optical gain in Ga (NAsP) quantum wells. The effect of N incorporation in the laser active areas is simulated.