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We report on the achievement of high density (In, Ga) As self-assembled quantum dots on GaP substrate with a good homogeneity. Good structural and electronic properties have been achieved, as revealed by room temperature photoluminescence measurements and by comparison to both InAs/GaAs and InAs/InP materials reference systems. This is supported by atomistic calculations where the indium incorporation in InGaAs/GaP quantum structures is found to enhance both the type-I bandlineup and direct bandgap properties. The photoluminescence temperature dependence of the bandgap evidences the quantum confinement effects. Our results provide a valid framework to implement silicon optical devices based on InGaAs/GaP nanostructures.