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In this work, we investigate the accumulative polarization (P) switching characteristics in ferroelectric (FE) thin films under the influence of sequential sub-coercive electric-field pulses. Performing the dynamic phase-field simulation (based on time-dependent Landau-Ginzburg model) and experimental measurement on Hf 0.4 Zr 0.6 O 2 (HZO), we analyze the electric field induced domain-wall (DW) motion and the resultant P accumulation process in FE. According to our analysis, even in the absence of an applied electric field, the DW can potentially undergo spontaneous motion. Such a DW instability leads to spontaneous P-excitation and relaxation processes, which play a pivotal role in accumulative P-switching in an FE grain. We show that the extent of such P accumulation increases with the increase in the applied electric field, increase in excitation time and decrease in relaxation time. Finally, by considering an …