作者
Md Tanvir Arafin, Zhaojun Lu
发表日期
2020/9/7
图书
Proceedings of the 2020 on Great Lakes Symposium on VLSI
页码范围
229-234
简介
Emerging memory systems such as resistive random access memory (RRAM), phase-change memory (PCM), and spin-transfer torque magneto-resistive random access memory (STT-MRAM) offer unique physical properties useful in designing next-generation processing in-memory (PIM) circuits and systems. Modified dynamic random access memory (DRAM) designs are also demonstrating on-chip data processing and bulk data operation capabilities. However, in-memory computation can fundamentally change the security models and assumptions of existing systems due to several key factors, such as modified system architecture, disparate programming models, side-channel effects, device reliability, hardware Trojans, and malicious perturbations in data processing. Therefore, in this paper, we survey and examine fundamental vulnerabilities arising from processing-in-memory systems. We aim to present the …
引用总数
202020212022202320241122
学术搜索中的文章
MT Arafin, Z Lu - Proceedings of the 2020 on Great Lakes Symposium …, 2020