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Investigation of growth and properties of InGaAs/InAsSb strained layer superlattices, identified as ternary strained layer superlattices (ternary SLSs), is reported. The material space for the antimony-based SLS detector development is expanded beyond InAs/InAsSb and InAs/(In) GaSb by incorporating Ga into InAs. It was found that this not only provides support for strain compensation but also enhances the infrared (IR) absorption properties. A unique InGaAs/InAsSb SLS exists when the conduction band of InGaAs aligns with that of InAsSb. The bandgap of this specific InGaAs/InAsSb SLS can then be tuned by adjusting the thickness of both constituents. Due to the enhanced electron-hole wavefunction overlap, a significant increase in the absorption coefficient was theoretically predicted for ternary SLS as compared to current state-of-the-art InAs/InAsSb SLS structures, and an approximately 30%–35% increase in …