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Given the multilevel internal SSD parallelism at the different four levels: channel-level, chip-level, die-level, and plane-level, how to exploit these levels of parallelism will directly and significantly impact the performance and endurance of SSDs, which is in turn primarily determined by three internal factors, namely, advanced commands, allocation schemes, and the priority order of exploiting the four levels of parallelism. In this paper, we analyze these internal factors to characterize their impacts, interplay, and parallelism for the purpose of performance and endurance enhancement of SSDs through an in-depth experimental study. We come to the following key conclusions: 1) Different advanced commands provided by Flash manufacturers exploit different levels of parallelism inside SSDs, where they can either improve or degrade the SSD performance and endurance depending on how they are used; 2) Different …