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This paper investigates, the electrostatic drive and sense of polysilicon resonators parallel to the substrate, using an interdigitated capacitor (electrostatic comb). Three experimental methods are used: microscopic observation with continuous or stroboscopic illumination, capacitive sensing using an amplitude-modulation technique and SEM observation. The intrinsic quality factor of the phosphorus-doped low-pressure chemical-vapor-deposited (LPCVD) polysilicon resonators is 49 000 ± 2000, whereas at atmospheric pressure, Q < 100. The finger gap is found to have a more pronounced effect on comb characteristics than finger width or length, as expected from simple theory