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In this work, Zn₂SnO₄:xCr³⁺ with high near-infrared luminescence intensity (broad emission centered at 800 nm and sharp emission at 703 nm) were successfully prepared by high temperature solid state method. Measurements indicated that the samples exhibited obvious photoluminescence as well as persistent luminescence properties. The results of X-ray diffraction indicated that high temperature facilitated the entry of Cr³⁺ into the Zn₂SnO₄ crystal lattice and formed replacement doping and promoted the luminescence efficiency of the samples. And, under the condition of 1450 °C and 0.002 at% Cr³⁺ concentration, sample with optimum NIR fluorescence properties was prepared. In the high-temperature sintering process, many defects of Zn₂SnO₄ were generated, which effectively promoted the formation of vacancies. The energy levels of these lattice defects (trap energy levels) facilitated the sub-stable …