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It has been shown that a ferroelectric material integrated into the gate stack of a transistor can create an effective negative capacitance (NC) that allows the device to overcome “Boltzmann tyranny”. While this switching below the thermal limit has been observed with Si-based NC field-effect transistors (NC-FETs), the adaptation to 2D materials would enable a device that is scalable in operating voltage as well as size. In this work, we demonstrate sustained sub-60 mV/dec switching, with a minimum subthreshold swing (SS) of 6.07 mV/dec (average of 8.03 mV/dec over 4 orders of magnitude in drain current), by incorporating hafnium zirconium oxide (HfZrO₂ or HZO) ferroelectric into the gate stack of a MoS₂ 2D-FET. By first fabricating and characterizing metal–ferroelectric–metal capacitors, the MoS₂ is able to be transferred directly on top and characterized with both a standard and a negative capacitance gate stack …