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In this work we quantify noise in experimental resistive responses of analog-based samples provoked by pulse trains of constant bias voltage amplitude which is a biasing scheme that has been widely adopted for modulating memristor resistance. Device stochastic switching behavior aggregated with instrument induced noise is captured for resistive responses provoked by various voltage levels and subsequently integrated in a recently presented ReRAM model [1]. The method used is rather uncomplicated and can be easily plugged in current characterization tools [2].