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We present simultaneous measurement of the refractive index and absorption coefficient in a AlGaAs/GaAs multiple quantum well structure near the band gap by Fourier transform spectral interferometry. Both quantities were measured across heavy-and light-hole excitons for temperatures ranging from liquid helium to room temperature. The experimental results are analyzed using an analytical expression for the complex dielectric function of Wannier excitons in fractional dimension.© 1998 American Institute of Physics. S0003-69519803042-3

Accurate knowledge of the refractive index in III–V nanostructures is of primary importance in the development of optoelectronic devices such as modulators, optical switches, or vertical cavities surface-emitting lasers. These devices operate near the band gap, where excitonic effects cannot be neglected and they often directly rely on excitonic effects that induce strong …