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We present Raman-scattering measurements on In x Ga 1− x N over the entire composition range of the alloy. The frequencies of the A 1 (LO) and E 2 modes are reported and show a good agreement with the one-mode behavior dispersion predicted by the modified random-element isodisplacement model. The A 1 (LO) mode displays a high intensity relative to the E 2 mode due to resonant enhancement. For above band-gap excitation, the A 1 (LO) peak displays frequency shifts as a function of the excitation energy due to selective excitation of regions with different In contents, and strong multiphonon scattering up to 3LO is observed in outgoing resonance conditions.