作者
J Ibanez, A Patane, M Henini, L Eaves, S Hernandez, R Cusco, L Artus, Yu G Musikhin, PN Brounkov
发表日期
2003/10/13
期刊
Applied physics letters
卷号
83
期号
15
页码范围
3069-3071
出版商
American Institute of Physics
简介
We report a Raman scattering investigation of InAs vibrational modes in multiple layers of InAs self-assembled quantum dots in a GaAs matrix. The Raman peak associated with quantum-dot phonons shows a downward frequency shift as the interlayer spacing decreases. We attribute this frequency shift to the relaxation of the elastic strain in the stacked quantum-dot layers. From the phonon frequency shift, we estimate the magnitude of the strain in the quantum dot layers, which we relate to the energy of the photoluminescence emission of the dots.
引用总数
学术搜索中的文章
J Ibanez, A Patane, M Henini, L Eaves, S Hernandez… - Applied physics letters, 2003