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An experimental characterization of broadband semiconductor optical amplifiers (SOAs) at 1360 nm is reported. In addition to their inherent small size, fast dynamics, and feasibility of integration with other optoelectronic components, the relevance of the multi quantum well (MQW) asymmetric SOAs here reported relies on the achievement of a flat and broad 3 dB amplification bandwidth. SOAs are composed of nine _In1-xGa_xAs_yP_1-y 0.2% tensile strained MQW layers separated by latticed matched InP barriers. The asymmetry of the active region is based on the difference of the molar concentrations, with Ga (x) ranging from 0.46 to 0.47 and As (y) ranging from 0.89 to 0.94. Devices under test have 7 degrees tilt cleaved facets and feature different geometries: ridge widths from 2 to 4 μm in steps of 0.25 μm, and cavity lengths of 600, 900, 1200, and 1500 μm. Fabry-Pérot (FP) lasers with the same material composition …