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An exhausted capacity of current Passive Optical Networks has been anticipated as bandwidth-hungry applications such as HDTV and 3D video become available to end-users. To enhance their performance, the next generation optical access networks have been proposed, using optical carriers allocated within the E-band (1360-1460 nm). It is partly motivated by the low-water peak fiber being manufactured by Corning. At these wavelengths, choices for low cost optical amplifiers, with compact size, low energy consumption and feasibility for integration with other optoelectronic components are limited, making the semiconductor optical amplifiers (SOA) a realistic solution. An experimental characterization of a broadband and low polarization sensitive asymmetric multi quantum well (MQW) SOA operating in the E-band is reported. The SOA device is composed of nine 6 nm In_1-xGa_xAsyP_1-y 0.2% tensile strained …