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Using a combination of optical, electrical, and magnetotunneling measurements on resonant tunneling diodes incorporating a quantum well, we demonstrate that the conduction band states of the layer undergo a marked change with increasing N content. The abrupt change in the electronic properties of differs significantly from the smoother variation with alloy composition observed in other alloy material systems, such as . We show that the incorporation of N in GaAs gives rise to a qualitatively different type of alloy phenomena: N impurities and N clusters act to localize the extended Bloch states of GaAs at characteristic resonant energies, thus breaking up the energy–wave-vector dispersion relations and reducing the character of the electronic states near the conduction band edge.