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InAsSb/InAs type II strain balanced superlattices lattice matched to GaSb have recently been proposed as an alternative to InAs/(In) GaSb short period superlattices for mid-to long infrared photodetectors. Photoluminescence data at 4 K of OMVPE grown InAsSb (multi-) quantum wells in an InAs matrix on InAs and GaSb substrates is presented for Sb compositions between 4% and 27%. The measured transition energies are simulated with a self-consistent Poisson and Schroedinger equation solver that includes strain and band-offsets. The fitted parameters are then used to predict the type II transition energies of InAsSb/InAs strain balanced superlattice absorber stacks at 77 K for different compositions and periods. The optical matrix element was calculated and compared with InAs/(In) GaSb superlattices. The InAsSb/InAs structures can be designed with higher or equal matrix elements for longer periods. Finally …