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A GaSb/ln _0.4 Ga _0.6 As heterojunction Z-Shaped TFET is proposed and investigated by a TCAD simulation tool. A low subthreshold swing (16.2 mV/dec) is obtained. A large on- state current, I _on (748μA/μm) and a large on-and off-state current ratio, I _on /I _off (7.48×10 ⁹ ) are achieved for the device under a drain bias of 0.5 V. In addition, the temperature dependence of the proposed device is presented, and it shows that low temperatures favor for I _on /I _off . It is also revealed that the on-state current can be enhanced by adjusting the device geometry. Moreover, the device can work at a low supply voltage (~0.2 V).