作者
Guangxi Hu, Haisheng Qiang, Shuyan Hu, Ran Liu, Lirong Zheng, Xing Zhou
发表日期
2017/1/12
期刊
Japanese Journal of Applied Physics
卷号
56
期号
2
页码范围
021002
出版商
IOP Publishing
简介
Analytical models for threshold voltage and subthreshold swing of GaN-based fin-shaped field-effect transistors (FinFETs) are obtained. Analytical expressions for the drain-induced barrier lowering effect and threshold voltage roll-off effect are presented. The explicit expressions for threshold voltage and subthreshold swing make the model suitable for being embedded in circuit simulations and design tools.
学术搜索中的文章
Analytical models for GaN-based heterostructure-free normally off fin-shaped field-effect transistor
G Hu, H Qiang, S Hu, R Liu, L Zheng, X Zhou - Japanese Journal of Applied Physics, 2017