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Stable and reliable optical power converting devices are obtained using vertical multi-junction laser power converters. They are based on the GaAs and the InP material systems and are used for power-over-fiber or power-beaming applications. This study demonstrates that, in addition to providing the overall best conversion efficiencies with output voltages ideal for various applications, these semiconductor photovoltaic devices are very tolerant to beam non-uniformity, partial illumination, or beam displacement variations. Examples are given with two tight beams, each covering as little as ~7% of the cell area. An optical input power of 10 W was converted with still an efficiency of Eff ~59.4%. For an input power of 20 W, the illuminated area was set to ~22% without significantly affecting the conversion efficiency of Eff ~60%. Remarkably, for a beam diameter at ~65% of the chip length (i.e., covering ~35% of the chip area), a converted power of 29.5 W was obtained using a 12-junction GaAs device with a conversion efficiency of 61%. For a 10 junction InP-based device, an efficiency of Eff = 51.1% was obtained at an output voltage reaching as high as V_oc = 5.954 V for an average optical intensity of 69 W/cm² and an illumination area of ~57%.