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The energy levels of nanometer size InGaAs quantum dots epitaxially grown on GaAs by the coherent islanding effect are probed using selectively excited photoluminescence (PL), and PL excitation. A lateral-confinement-induced interlevel spacing of-30 meV between the first two states can be deduced from the spectra.

The quest to obtain semiconductor quantum structures of reduced dimensionality is reaching a new apex with the recentlm3 synthesis of quantum dot (QD) structures with diameters comparable to the electrons’ de Broglie wavelength (D-13 run). Since the advent of the now commonly used semiconductor quantum well (QW) structures with one degree of confinement, efforts have been deployed to push the limit to one and zero dimensionality (1D and OD), in order to study and exploit their sharper density-of-states (DOS). It has been recently shown that it is possible to directly grow QDs by molecular …