作者
ZR Wasilewski, S Fafard, JP McCaffrey
发表日期
1999/5/1
期刊
Journal of crystal growth
卷号
201
页码范围
1131-1135
出版商
North-Holland
简介
A new procedure for the growth of stacked self-assembled quantum dot layers is described. The main effect of the procedure is to convert the quantum dot population into a population of quantum disks of approximately equal height. Proposed model of the overgrowth process for highly strained 3D islands invokes mechanisms which may lead to a variety of dot shape modification and opens up new ways of influencing the dot population by deliberate control of the overgrowth process. Demonstrated very good performance of test devices indicate that the proposed procedure may have positive impact on the further development of quantum dot lasers.
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