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We show how the height dispersion of self-organized InAs/InP(001) quantum islands emitting at 1.55 μm was reduced by optimizing the epitaxial growth parameters. Low height dispersion was obtained when the InAs deposit thickness was much greater than the critical thickness for two-dimensional/three-dimensional growth mode transition, and when adatom surface diffusion was favored by increasing the growth temperature or reducing the arsenic pressure during the InAs growth. When these growth conditions are not respected, the multicomponent photoluminescence spectrum obtained is explained through the common interpretation of island height varying with monolayer fluctuation. In optimized growth conditions, the multicomponent spectrum obtained is interpreted as emission from fundamental and excited levels of InAs islands with low height dispersion. Transmission electron microscopy (TEM) imaging …