作者
Anisha Goswami, Mridula Gupta, RS Gupta
发表日期
2001/10/20
期刊
Microwave and Optical Technology Letters
卷号
31
期号
2
页码范围
97-105
出版商
John Wiley & Sons, Inc.
简介
A fringing field‐effect‐dependent MOSFET equivalent‐circuit model for its microwave frequency applications has been developed. The thermal noise performance of the device has also been analyzed, including the distributed gate. The equivalent‐current noise source takes into account the thermal noise generated by the resistive and inductive gate, and the results so obtained are compared with experimental/simulated data, and are in close agreement. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 97–105, 2001.
学术搜索中的文章
A Goswami, M Gupta, RS Gupta - Microwave and Optical Technology Letters, 2001