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An efficient, direct method to extract the admittance parameters and an accurate small‐signal equivalent circuit model of an MOS transistor for RF applications have been developed, incorporating the effect of the channel‐length modulation. The Y‐parameter expressions are developed in terms of MOSFET parameters, parasitic elements, frequency, and bias conditions. Further, the scattering parameters and different gains for an Si–MOSFET have been evaluated to show its RF behavior. The results obtained are compared with experimental data, and are in good agreement. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 27: 352–358, 2000.