查看文章

Recently deep submicron and SiGe (silicongermanium) bipolar CMOS technologies have enhanced the performance of Si-based radio frequency (RF) integrated circuits up to microwave frequencies. The integration of RF MEMS components, such as inductors and capacitors, could further improve the performance of key RF circuit blocks such as voltage controlled oscillators (VCO), low-noise amplifiers, filters, mixers, and power amplifiers. We have developed a process to integrate RF MEMS inductors with standard commercial CMOS dies. The purpose of this work is to present the integration of MEMS inductors with VCOs fabricated in a 0.18 μm standard CMOS technology.