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A model is developed considering the substrate effect, fringing field effect, and gate and drain contact pad effect to evaluate the scattering parameters for a short‐gate‐length insulated gate field‐effect transistor by extracting the admittance parameters for its microwave frequency applications. The parasitic elements are also incorporated in the analysis, and the merits of different device dimensions are shown in terms various gains at microwave frequencies. ©2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 24: 341–348, 2000.