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An analytical model for two‐dimensional electron gas (2‐DEG) for a pseudomorphic Al_zGa_1−zAs/In_yGa_1−yAs modulation‐doped field‐effect transistor is developed. The 2‐DEG density is calculated as a function of device dimensions and doping density. A simple analytical expression is established for the charge control. A high transconductance of 270 mS/mm is obtained, which is important in realizing the device for millimeter microwave applications. The results so obtained are compared with experimental data, and show excellent agreement. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 22: 41–48, 1999.