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Physical unclonable functions (PUFs) are circuits that produce outputs determined by random physical variations from fabrication. The PUF studied in this paper utilizes the variation sensitivity of static random access memory (SRAM) data retention voltage (DRV), the minimum voltage at which each cell can retain state. Prior work shows that DRV can uniquely identify circuit instances with 28% greater success than SRAM power-up states that are used in PUFs [1]. However, DRV is highly sensitive to temperature, and until now this makes it unreliable and unsuitable for use in a PUF. In this paper, we enable DRV PUFs by proposing a DRV-based hash function that is insensitive to temperature. The new hash function, denoted DRV-based hashing (DH), is reliable across temperatures because it utilizes the temperature-insensitive ordering of DRVs across cells, instead of using the DRVs in absolute terms. To evaluate …