作者
Rachel A Oliver, G Andrew D Briggs, Menno J Kappers, Colin J Humphreys, Shazia Yasin, James H Rice, Jonathon D Smith, Robert A Taylor
发表日期
2003/7/28
期刊
Applied Physics Letters
卷号
83
期号
4
页码范围
755-757
出版商
American Institute of Physics
简介
We describe the growth of InGaN quantum dots (QDs) by metalorganic vapor phase epitaxy. A thin InGaN epilayer is grown on a GaN buffer layer and then annealed at the growth temperature in molecular nitrogen inducing quantum dot formation. Microphotoluminescence studies of these QDs reveal sharp peaks with typical linewidths of at 4.2 K, the linewidth being limited by the spectral resolution. Time-resolved photoluminescence suggests that the excitons in these structures have lifetimes in excess of 2 ns at 4.2 K.
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InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal
RA Oliver, GAD Briggs, MJ Kappers, CJ Humphreys… - Applied Physics Letters, 2003