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Nanosheets of bismuth telluride (Bi₂Te₃), a topological insulator material that exhibits broadband saturable absorption due to its non‐trivial Dirac‐cone like energy structure, are utilized to generate short pulses from Tm:ZBLAN waveguide lasers. By depositing multiple layers of a carefully prepared Bi₂Te₃ solution onto a glass substrate, the modulation depth and the saturation intensity of the fabricated devices can be controlled and optimized. This approach enables the realization of saturable absorbers that feature a modulation depth of 13% and a saturation intensity of 997 kW/cm². For the first time to our knowledge, Q‐switched mode‐locked operation of a linearly polarized mid‐IR ZBLAN waveguide chip laser was realized in an extended cavity configuration using the topological insulator Bi₂Te₃. The maximum average output power of the laser is 16.3 mW and the Q‐switched and mode‐locked repetition rates …