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The effect of the oxide barrier thickness (t SiO2) reduction and the Si excess ([Si] exc) increase on the electrical and electroluminescence (EL) properties of Si-rich oxynitride (SRON)/SiO 2 superlattices (SLs) is investigated. The active layers of the metal–oxide–semiconductor devices were fabricated by alternated deposition of SRON and SiO 2 layers on top of a Si substrate. The precipitation of the Si excess and thus formation of Si nanocrystals (NCs) within the SRON layers was achieved after an annealing treatment at 1150 C. A structural characterization revealed a high crystalline quality of the SLs for all devices, and the evaluated NC crystalline size is in agreement with a good deposition and annealing control. We found a dramatic conductivity enhancement when the Si content is increased or the SiO 2 barrier thickness is decreased, due to a larger interaction of the carrier wavefunctions from adjacent layers …