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Low-power, high-performance metal–insulator–metal (MIM) non-volatile resistive memories based on HfO₂ high-k dielectric are fabricated using a drop-on-demand inkjet printing technique as a low-cost and eco-friendly method. The characteristics of resistive switching of Pt (bottom)/HfO₂/Ag (top) stacks on Si/SiO₂ substrates are investigated in order to study the bottom electrode’s interaction with the HfO₂ dielectric layer and the resulting effects on resistive switching. The devices show low Set and Reset voltages, high ON/OFF current ratio, and relatively low switching current (∼1 μA), which are comparable to the characteristics of current commercial CMOS memories. In order to understand the resistive switching mechanism, direct structural observation is carried out by field-emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HRTEM) on cross-sectioned …